Energy levels in strained semiconductor heterojunctions

Maciej Oszwaldowski

doi:10.1117/12.224950

16 October 1995 Energy levels in strained semiconductor heterojunctions

Maciej Oszwaldowski

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224950
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

A review of the effect of the internal biaxial strain on the energy bands in thin film heterostructures composed of the cubic structure semiconductors is presented.

Citation Download Citation

Maciej Oszwaldowski "Energy levels in strained semiconductor heterojunctions", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224950

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