GaSb-based mid-infrared quantum well diode lasers

Hong K. Choi; George W. Turner

doi:10.1117/12.208452

28 April 1995 GaSb-based mid-infrared quantum well diode lasers

Hong K. Choi, George W. Turner

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208452
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The current status of GaInAsSb/AlGaAsSb quantum-well (QW) lasers emitting at approximately 2 micrometers and InAsSb/InAlAsSb QW lasers emitting at approximately 4 micrometers is described. At room temperature, GaInAsSb/AlGaAsSb lasers have exhibited pulsed threshold current density as low as 143 A/cm² and cw power of 1.3 W from a 300- micrometers aperture. Ridge-waveguide lasers have operated cw up to 130 degree(s)C, with a maximum power of 100 mW in a single lobe at 20 degree(s)C. From a tapered laser, diffraction-limited cw power of 200 mW has been obtained. The InAsSb/InAlAsSb QW broad- stripe lasers have operated pulsed up to 165 K, with a characteristic temperature of 30 K up to 120 K. At 80 K, cw power up to 30 mW/facet has been obtained. Ridge-waveguide lasers have exhibited cw threshold current of 35 mA at 80 K, and operated cw up to 128 K.

Citation Download Citation

Hong K. Choi and George W. Turner "GaSb-based mid-infrared quantum well diode lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208452

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