Paper
8 May 1995 Avalanche photodiodes for near-infrared photon counting
Sergio D. Cova, Andrea L. Lacaita, Franco Zappa, Piergiorgio G. Lovati
Author Affiliations +
Abstract
We report the photon-counting and timing performance of various Single-Photon Avalanche Diodes (SPADs) employed to detect single photons in the near-infrared wavelength range. Suitable Silicon structures achieve high quantum efficiency (70% at 800 nm) and can work up to 1.1 micrometers . Ge SPADs and InGaAs devices are sensitive up to 1.4 micrometers and 1.6 micrometers , respectively, wit ha few percent-quantum efficiencies. We compare these results with the performance of state-of-the-art photomultiplier tubes with extended near-infrared sensitivity. We also report the first results obtained with a germanium quad-cell sensor, which may be considered the first step towards the development of SPAD arrays.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio D. Cova, Andrea L. Lacaita, Franco Zappa, and Piergiorgio G. Lovati "Avalanche photodiodes for near-infrared photon counting", Proc. SPIE 2388, Advances in Fluorescence Sensing Technology II, (8 May 1995); https://doi.org/10.1117/12.208529
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Germanium

Silicon

Quantum efficiency

Indium gallium arsenide

Avalanche photodiodes

Luminescence

Back to Top