Defects and interfaces in low-temperature grown Ge/Si heterostructures

Serge Oktyabrsky; Jagdish Narayan

doi:10.1117/12.206905

24 April 1995 Defects and interfaces in low-temperature grown Ge/Si heterostructures

Serge Oktyabrsky, Jagdish Narayan

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206905
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Initial stages of misfit relaxation process in Ge epitaxial films grown by pulsed laser deposition on (001) Si substrates have been investigated by high-resolution transmission electron microscopy. Special emphasis is placed on conditions leading to a 2D (layer-by-layer) growth mode. The evolution of the dislocation network as a function of film thickness and thermal annealing is controlled by surface undulations and interactions between dislocations. The dislocation interactions leading to rearrangements in a nonequilibrium dislocation network driven by elastic interaction between parallel 60 degree(s) dislocation segments are discussed in detail. Based upon our experimental observations, we propose a model for the formation of stacking faults in heterostructures.

Citation Download Citation

Serge Oktyabrsky and Jagdish Narayan "Defects and interfaces in low-temperature grown Ge/Si heterostructures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206905

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