Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions

Marek Panek; Regina Paszkiewicz; Marek J. Tlaczala; Bogdan Paszkiewicz; Janusz Kozlowski; Sergey Novikov; V. V. Tshaldyshev

doi:10.1117/12.206913

24 April 1995 Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions

Marek Panek, Regina Paszkiewicz, Marek J. Tlaczala, Bogdan Paszkiewicz, Janusz Kozlowski, Sergey Novikov, V. V. Tshaldyshev

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Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206913
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Liquid phase epitaxy (LPE) has been carried out from the mixed Ga+Bi solution of different thickness to improve GaAs epilayer surface morphology and the growth process control. The difference between thin and thick solutions has been demonstrated. The process occurring during epitaxy of GaAs layers growth in a non-stationary LPE system from a molten Ga-Bi solution has been studied. Results obtained from thin and thick liquid phase epitaxy has been compared with the diffusion limited compound semiconductor epitaxial growth model. The results revealed that there are two anomalous kinetics growth zones of solvent composition in which the growth rate is unpredictable by diffusion theory of LPE. A model of the LPE growth from Ga-Bi solutions has been suggested, that take into account complex shape of the liquids curve of the Ga-Bi-As system and changes in the mass transfer process occurring in the microinhomogeneous liquid phase. Electrical and optical property of GaAs epitaxial layer grown from mixed Ga-Bi solvent was studied and discussed. The results from two laboratories that used different experimental methods have been compared.

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Marek Panek, Regina Paszkiewicz, Marek J. Tlaczala, Bogdan Paszkiewicz, Janusz Kozlowski, Sergey Novikov, and V. V. Tshaldyshev "Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206913

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KEYWORDS

Liquid phase epitaxy

Gallium arsenide

Bismuth

Liquids

Arsenic

Gallium

Diffusion

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