Paper
24 April 1995 Variation of threshold current with well barrier hole-burning effect in quantum well lasers
Hussain Arbab Tafti, Fatima N. Farokhrooz, K. K. Kamath, P. R. Vaya
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Abstract
Well-barrier (W-B) hole burning in quantum well lasers is argued to be a consequence of the carrier build up in the barrier during the capture and release of carriers by the quantum well. The rate in this process are characterized by a capture time ((tau) c) and by the in/out ratio ((eta) ) defined as the ratio of the capture and release times for carriers into and out of the well region. In this paper a circuit model to represent W-B hole burning that is responsible for a large change in the threshold current density have been developed from the ratio equations. The model is simulated using the circuit simulation program SPICE for various values of (eta) and compared for a QW with and without W-B barrier hole burning.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hussain Arbab Tafti, Fatima N. Farokhrooz, K. K. Kamath, and P. R. Vaya "Variation of threshold current with well barrier hole-burning effect in quantum well lasers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206894
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Cited by 1 scholarly publication.
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KEYWORDS
Hole burning spectroscopy

Quantum wells

Laser damage threshold

Niobium

Device simulation

Circuit switching

Optical simulations

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