Progress in semiconductor ring lasers

Peter J. R. Laybourn; Thomas F. Krauss

doi:10.1117/12.205023

17 March 1995 Progress in semiconductor ring lasers

Peter J. R. Laybourn, Thomas F. Krauss

Proceedings Volume 2401, Functional Photonic Integrated Circuits; (1995) https://doi.org/10.1117/12.205023
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Recent work on the development of monolithic semiconductor ring lasers is presented. Circular or oval resonant waveguide rings have been demonstrated; the minimum waveguide bend radius dictates the type of guiding structure needed. In very small rings the laser material must be etched through to provide sufficient refractive index contrast and optical guiding; in larger structures weaker guiding using strip loading is adequate, and problems of wall damage and optical scattering can be avoided. However, there may still be residual loss because of the penetration of the guided optical wave above the thinned cladding layer. A fabrication method has been developed to prevent the interaction of the wave with lossy contact metallization. MMI couplers are ideal output devices for larger ring lasers, efficient operation of which has been demonstrated. These laser configurations are also extremely suitable for mode-locked operation; the ring cavity length determines the pulse frequency. Mode-locking at 28 GHz was inferred from the lasing spectrum of a 3.1 mm circumference ring laser, the design of which was modified by the isolation of short lengths of waveguide to form saturable absorbers.

Citation Download Citation

Peter J. R. Laybourn and Thomas F. Krauss "Progress in semiconductor ring lasers", Proc. SPIE 2401, Functional Photonic Integrated Circuits, (17 March 1995); https://doi.org/10.1117/12.205023

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