Photolithography process characterization and 3D simulation using track-mounted development rate monitor data

Saraubh Dutta Chowdhury; David W. Alexander; Mark Goldman; Alan W. Kukas; Nigel R. Farrar; Clifford H. Takemoto; Bruce W. Smith; Linard Karklin

doi:10.1117/12.210364

9 June 1995 Photolithography process characterization and 3D simulation using track-mounted development rate monitor data

Saraubh Dutta Chowdhury, David W. Alexander, Mark Goldman, Alan W. Kukas, Nigel R. Farrar, Clifford H. Takemoto, Bruce W. Smith, Linard Karklin

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210364
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A track-mounted, in-situ dissolution rate monitor (DRM) is used to study the impact of exposure variations on g-line, i-line and DUV positive chemically amplified resists. In the i- line case, a comparative study between constant spray and a spray/puddle process was undertaken. In all cases, modeling parameters were extracted from the track-mounted DRM data and entered into 2D and 3D simulators using an experimentally generated development rate vs. PAC concentration table. Simulated profiles were compared with actual SEM cross- sections. Whenever possible, DRM traces were used to analyze standing waves, surface inhibition effects and quantify resist performance by calculating contrast. For the g-line case, the impact of PEB temperature upon the standing wave effects, as quantified by the in-situ DRM data, was studied.

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Saraubh Dutta Chowdhury, David W. Alexander, Mark Goldman, Alan W. Kukas, Nigel R. Farrar, Clifford H. Takemoto, Bruce W. Smith, and Linard Karklin "Photolithography process characterization and 3D simulation using track-mounted development rate monitor data", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210364

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