Paper
9 June 1995 t-Boc protected poly(p-hydroxystyrene-alt-carbon monoxide): a new class of deep-UV resists
M. S. Brookhart, Joseph M. DeSimone, Robert E. Johnson, Shonali Tahiliani
Author Affiliations +
Abstract
An efficient synthetic route for the synthesis of t-Boc protected poly (p-hydroxy styrene-alt- carbon monoxide) utilizing a Pd(II) catalyst is reported. The polymer was deprotected by thermolysis or acidolysis of the tert-butoxycarbonyl protecting group to give the p- hydroxystyrene/CO copolymer. This material should lend itself well to lithographic applications because of our ability to control the molar mass of the material with a narrow molar mass distribution (which should lend to high development efficiencies). Preliminary lithographic evaluation of the copolymer is reported herein.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Brookhart, Joseph M. DeSimone, Robert E. Johnson, and Shonali Tahiliani "t-Boc protected poly(p-hydroxystyrene-alt-carbon monoxide): a new class of deep-UV resists", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210371
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KEYWORDS
Polymers

Lithography

Deep ultraviolet

Nitrogen

Absorption

Argon

Carbon monoxide

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