Hot Carrier Relaxation In Amorphous Germanium

A. P. DeFonzo

doi:10.1117/12.970585

25 November 1980 Hot Carrier Relaxation In Amorphous Germanium

A. P. DeFonzo

Proceedings Volume 0248, Role of Electro-Optics in Photovoltaic Energy Conversion; (1980) https://doi.org/10.1117/12.970585
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

The ultimate expected efficiencies of thin film amorphous solar cells may be raised by using amorphous alloys of germanium and silicon. To date, no single measurement technique has appeared that directly and decisively identifies and characterizes the key photovoltaic related phenomena occuring in solar cell grade amorphous semiconductors. In this presentation, an ultra high speed electrooptical approach to the measurement of the optical and electrical properties of amorphous semiconducting thin films is described. Results of measurements performed to date on amorphous germanium alloys are presented and the implications of the data regarding solar cell applications are discussed.

Citation Download Citation

A. P. DeFonzo "Hot Carrier Relaxation In Amorphous Germanium", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); https://doi.org/10.1117/12.970585

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available