Extreme ultraviolet lithography for circuit fabrication at 0.1-um feature size

Daniel A. Tichenor; Glenn D. Kubiak; Richard H. Stulen

doi:10.1117/12.220978

18 September 1995 Extreme ultraviolet lithography for circuit fabrication at 0.1-μm feature size

Daniel A. Tichenor, Glenn D. Kubiak, Richard H. Stulen

Proceedings Volume 2523, Applications of Laser Plasma Radiation II; (1995) https://doi.org/10.1117/12.220978
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Projection lithography is driven to shorter wavelengths to meet the demand for smaller critical dimensions in advanced computer chips. This trend logically extends to the extreme ultraviolet (EUV) region, where reduction imaging can be achieved using all-reflective optics. The wavelength region of primary interest is from 11 nm to 14 nm, where multilayer reflective coatings have demonstrated reflectivity greater than 60%. The leading candidate for a practical, compact source of EUV radiation is a laser plasma source, which provides sufficient conversion efficiency, about 1%, in the relevant bandwidth. This paper discusses the concept of EUV lithography bassed on a laser plasma source and describes a laboratory EUV lithography tool currently being characterized.

Citation Download Citation

Daniel A. Tichenor, Glenn D. Kubiak, and Richard H. Stulen "Extreme ultraviolet lithography for circuit fabrication at 0.1-μm feature size", Proc. SPIE 2523, Applications of Laser Plasma Radiation II, (18 September 1995); https://doi.org/10.1117/12.220978

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