Paper
3 November 1995 Photoreflectance characterization on GaAs/AlGaAs optical waveguides of multiple quantum-well structure
Gwo-Jen Jan, Yu-Yuan Tai, Kuo-Tung Hsu
Author Affiliations +
Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226204
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
Two GaAs/AlGaAs passive semiconductor channel waveguides of the multiple quantum well structure have been made by molecular beam epitaxial growth technique. The specimens were studied by photoreflectance (PR) spectroscopy at room temperature. The micro-structures of the PR spectral energy features on the layers of the multiple quantum wells and band edge transition were observed. The optical transition energy features were fitted by the first derivative Gaussian function form (GFF) and the peak positions of the theoretical prediction for the micro-structures were calculated by using effective mass envelope function model. The energy features of the micro-structure in PR spectra were identified and interpreted. The results show that PR is a powerful tool to characterize the optical waveguides of multiple quantum well structure.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gwo-Jen Jan, Yu-Yuan Tai, and Kuo-Tung Hsu "Photoreflectance characterization on GaAs/AlGaAs optical waveguides of multiple quantum-well structure", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226204
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KEYWORDS
Quantum wells

Waveguides

Gallium arsenide

Molecular beams

Channel waveguides

Semiconductors

Spectroscopes

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