Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Wei Gao; Paul Raymond Berger; Robert G. Hunsperger; Jagadeesh Pamulapati; Richard T. Lareau

doi:10.1117/12.237703

12 April 1996 Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Wei Gao, Paul Raymond Berger, Robert G. Hunsperger, Jagadeesh Pamulapati, Richard T. Lareau

Proceedings Volume 2685, Photodetectors: Materials and Devices; (1996) https://doi.org/10.1117/12.237703
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We will present high quality In_0.53Ga_0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

Citation Download Citation

Wei Gao, Paul Raymond Berger, Robert G. Hunsperger, Jagadeesh Pamulapati, and Richard T. Lareau "Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237703

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