High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes

Norikazu Nakayama; Satoshi Itoh; Akira Ishibashi; Yoshifumi Mori

doi:10.1117/12.238989

1 May 1996 High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes

Norikazu Nakayama, Satoshi Itoh, Akira Ishibashi, Yoshifumi Mori

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238989
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Molecular beam epitaxy (MBE) has been used to grow our II-VI green and blue light-emitting diodes (LEDs) on n-GaAs substrates. The main structure consists of a ZnCdSe/ZnSSe triple quantum-well active region, ZnSSe carrier confining layers, ZnMgSSe cladding layers, and a p-ZnTe/p-ZnSe multiple quantum-well contact region. The LED chips, 0.3 multiplied by 0.3 mm² in size, were mounted on LED leadframes and were encapsulated in epoxy. The devices produce light output powers of 3.5 mW (513 nm) and 1.5 mW (486 nm) for a direct current (dc) of 20 mA at room temperature. The corresponding external quantum efficiencies are 7.2% for the green, and 2.9% for the blue LEDs. In particular, the blue LED operated at a low applied voltage of 2.63 V for 20 mA. An aging test showed a half-intensity lifetime of 1000 hours for the candela-class blue LED under a constant dc drive current of 10 mA at an ambient temperature of 27 degrees Celsius.

Citation Download Citation

Norikazu Nakayama, Satoshi Itoh, Akira Ishibashi, and Yoshifumi Mori "High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238989

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