Contrast-boosted resist using a polarity-change reaction during aqueous base development

Shou-ichi Uchino; Takumi Ueno; Sonoko Migitaka; Jiro Yamamoto; Toshihiko P. Tanaka; Fumio Murai; Hiroshi Shiraishi; Michiaki Hashimoto

doi:10.1117/12.241842

14 June 1996 Contrast-boosted resist using a polarity-change reaction during aqueous base development

Shou-ichi Uchino, Takumi Ueno, Sonoko Migitaka, Jiro Yamamoto, Toshihiko P. Tanaka, Fumio Murai, Hiroshi Shiraishi, Michiaki Hashimoto

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241842
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A high-contrast resist, called a contrast boosted resist (CBR), using a water-repellent compound that changes into hydrophilic compounds during aqueous base development has been developed for electron-beam (EB) lithography. TBAB, 1,3,5-tris(bromoacetyl)benzene, was identified as the best water-repellent compound for the CBR. A CBR composed of novolak resin, hexamethoxymethylmelamine, 1,3,5-tris(trichloromethyl)triazine as an efficient acid generator, and TBAB enables the definition of 0.225-micrometer line-and-space patterns with an exposure dose of only 2 (mu) C/cm² using an EB writing system (acceleration voltage: 50 kV). The polarity change caused by the reaction of the TBAB with the base as well as crosslinking of the novolak resin by the TBAB are assumed to enhance the contrast in the CBR.

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Shou-ichi Uchino, Takumi Ueno, Sonoko Migitaka, Jiro Yamamoto, Toshihiko P. Tanaka, Fumio Murai, Hiroshi Shiraishi, and Michiaki Hashimoto "Contrast-boosted resist using a polarity-change reaction during aqueous base development", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241842

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