Paper
18 December 1996 Performance comparison of monolithic W-band singly balanced mixers utilizing GaAs HEMT and InP HBT technologies
Eric W. Lin, Kwo Wei Chang, Huei Wang, Lap Tran, K. L. Tan
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Abstract
We present measured data for three W-band singly-balanced mixers utilizing both GaAs pseudo-morphic HEMT and InP HBT device technologies, and critically compare their LO power requirements, and conversion loss and noise figure performance. Of the three distinct single-balanced mixers which were investigated, i.e. the GaAs HEMT and InP HBT Schottky-diode rat-race mixers and the dual quadrature resistive GaAs HEMT mixer, the InP HBT diode mixer exhibited the best noise figure at low intermediate frequencies and achieved good conversion loss performance with low LO drive requirements.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric W. Lin, Kwo Wei Chang, Huei Wang, Lap Tran, and K. L. Tan "Performance comparison of monolithic W-band singly balanced mixers utilizing GaAs HEMT and InP HBT technologies", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262767
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Cited by 1 scholarly publication.
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KEYWORDS
Field effect transistors

Gallium arsenide

Diodes

Data conversion

Telecommunications

Aerospace engineering

Signal attenuation

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