Paper
20 November 1996 Surface-emitting laser diode beam characterization (Abstract Only)
Richard D. Jones, Gregory E. Obarski, David J. Livigni, Holger Laabs
Author Affiliations +
Proceedings Volume 2870, Third International Workshop on Laser Beam and Optics Characterization; (1996) https://doi.org/10.1117/12.259921
Event: Third International Workshop on Laser Beam and Optics Characterization, 1996, Quebec City, Canada
Abstract
We have conducted thorough analysis of a vertical-cavity surface-emitting laser (VCSEL) diode which produces TEM01* (donut) and higher-order modes. Our analysis includes the following quantities as a function of drive current: optical power, spectral content, relative intensity noise (RIN) up to 100 MHz, and beam characterization parameters. While this VCSEL produces higher-order modes which are not affected by optical feedback, its optical power (0.05 mW for TEM01*), long term stability, and sensitivity to collimating lens position make it a doubtful candidate for use in a beam characterization round robin. Also, we hope to present recently acquired data from the diode-pumped tunable transverse mode laser developed in Berlin and tested at NIST.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard D. Jones, Gregory E. Obarski, David J. Livigni, and Holger Laabs "Surface-emitting laser diode beam characterization (Abstract Only)", Proc. SPIE 2870, Third International Workshop on Laser Beam and Optics Characterization, (20 November 1996); https://doi.org/10.1117/12.259921
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KEYWORDS
Semiconductor lasers

Vertical cavity surface emitting lasers

Laser development

Analytical research

Data acquisition

Diodes

Transmission electron microscopy

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