Application of porous Si micromachining technology in the calorimetric sensor

Zongsheng Lai; Xinjun Wan; Pingsong Zhou; Yunzhen Wang

doi:10.1117/12.251225

23 September 1996 Application of porous Si micromachining technology in the calorimetric sensor

Zongsheng Lai, Xinjun Wan, Pingsong Zhou, Yunzhen Wang

Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251225
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

Using porous silicon as a sacrificial layer with a large distance from the structure to the substrate, the porous Si micromachining is a new generation surface micromachining technology. A sketch of the special self-made 3-cavity electrochemical device used for anodisation and a detailed description of the porous film formation parameters were given int his paper. Anodisation is performed with current density 40 mA/cm² for 60 minutes. Formation parameters and amounts of several major impurities of porous-Si layer are studied. The porous-Si layer was removed in 1 percent KOH and then the flow channel with depth of 50 micrometers was formed. A 0.2 micrometers Ni-Cr thin film was deposited and patterned on the Si₃N₄+ poly-Si microbridge as a thermistor. The analysis model was introduced and met quite well with the experiment. The results of the fast response and low power dissipation are reported in this paper.

Citation Download Citation

Zongsheng Lai, Xinjun Wan, Pingsong Zhou, and Yunzhen Wang "Application of porous Si micromachining technology in the calorimetric sensor", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251225

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KEYWORDS

Silicon

Sensors

Resistors

Micromachining

Semiconducting wafers

Silicon films

Bridges

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