High-etch-rate anisotropic deep silicon plasma etching for the fabrication of microsensors

Tam Pandhumsoporn; Michael Feldbaum; Prashant Gadgil; Michel Puech; Philippe Maquin

doi:10.1117/12.251235

23 September 1996 High-etch-rate anisotropic deep silicon plasma etching for the fabrication of microsensors

Tam Pandhumsoporn, Michael Feldbaum, Prashant Gadgil, Michel Puech, Philippe Maquin

Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251235
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

Dry plasma etching can offer many advantages in the fabrication of MEMS because of its anisotropic etching behavior, high etch rate, and its compatibility with traditional IC processing. A patented high density inductively coupled RFIC plasma source with independent source power and substrate bias control has been developed by Alcatel for deep etching of silicon. With the optimization of hardware and process parameters in a Fluorine based chemistry, processes with silicon etch rate up to 6 micrometers/min, etch uniformity better than +/- 5 percent, Si:SiO₂ selectivity of more than 150:1, Si:photoresist selectivity of more than 50:1, etch depths of greater than 250 mm and profile angels of +/- 1 degree have been demonstrated. The silicon etch rate increases with increasing source power and Si:SiO₂ selectivity increases with decreasing substrate bias. Substrate temperature can be maintained between -120 to +20 C during processing. The process parameters can be adjusted to give the desired performance for a particular application. Process results obtained at room temperature and at lower temperatures for different applications will be presented. The results indicate that this technology is a promising candidate for micromachining. The tool can be configured for production applications with vacuum loadlock and automated wafer handling.

Citation Download Citation

Tam Pandhumsoporn, Michael Feldbaum, Prashant Gadgil, Michel Puech, and Philippe Maquin "High-etch-rate anisotropic deep silicon plasma etching for the fabrication of microsensors", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251235

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available