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24 September 1996 High-performance 1.3-μm laser diode by LP-MOVPE
TongNing Li, Jin-yan Ji, Xin-min Yan, Tao Liu, Zhou Ning, Jiang Liu, Zi-li Liu, Ge-fan Huang
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251917
Event: Photonics China '96, 1996, Beijing, China
Abstract
The progress in 1.3 micrometers wavelength InGaAsP/InP lasers for optic fiber communication and subscriber loop applications is reviewed. By using LP-MOVPE/LPE epitaxy techniques, the performance of commercial optical devices is considerably improved. The bandwidth of the 1.3 micrometers uncooled MQW-LD module could be high to 1.6GHz, threshold current Ith < 15mA, maximum fiber output power Pf >= 20mW while uniformity, reproducible, high yield are achieved. Further by growing active layer with compressive strained structure the lowest threshold current Ith equals 3.8mA was achieved with high reflection coating and the temperature performance of the SL-MQW-LD has been greatly improved, the change of slop efficiency at 25 degrees C and 85 degrees C is less than 1 dB. Using the holographic technique a high power 1.31 micrometers InGaAsP/InP multiquantum well distributed feedback laser has also been developed. The fiber output power of butterfly packaged module with optic isolator Pf > 10mW, threshold current Ith < 18mA, slop efficiency Es > 22 percent and side mode suppression ratio SMSR > 40dB. The composite triple beat CTB < -66dBc and the composite second order CSO < -56dBc by test frequencies equals 55.25 to approximately 289.25MHz with 40 NCTA channels, the carrier to noise ration CNR > 50 dB and the relative intensity noise RIN < -160dB/Hz.
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TongNing Li, Jin-yan Ji, Xin-min Yan, Tao Liu, Zhou Ning, Jiang Liu, Zi-li Liu, and Ge-fan Huang "High-performance 1.3-μm laser diode by LP-MOVPE", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251917
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KEYWORDS
Quantum wells
Semiconductor lasers
Telecommunications
Epitaxy
Analog electronics
Composites
Fiber lasers
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