Paper
30 January 1997 Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification
Emil S. Koteles, Jian Jun He, N. Sylvain Charbonneau, Philip J. Poole, Geof C. Aers, Yan Feng, Richard D. Goldberg, Ian V. Mitchell
Author Affiliations +
Abstract
Polarization insensitive 1.5 micrometer QW optical amplifiers, modulators, and detectors were fabricated using a novel, simple, post-growth, integratable technique. The process utilizes ion-implantation-induced, spatially selective, quantum well (QW) shape modification. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, merging the two bands and thus eliminating the difference between the TE (transverse electric) and TM (transverse magnetic) waveguide propagation modes. Current- voltage measurements indicate that junction characteristics are well maintained after processing. This simple technique for fabricating discrete polarization insensitive optoelectronic devices is readily extended to the monolithic integration of such devices along with other passive and active optoelectronic devices and provides a pathway to practical photonic integrated circuits.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emil S. Koteles, Jian Jun He, N. Sylvain Charbonneau, Philip J. Poole, Geof C. Aers, Yan Feng, Richard D. Goldberg, and Ian V. Mitchell "Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification", Proc. SPIE 2918, Emerging Components and Technologies for All-Optical Photonic Systems II, (30 January 1997); https://doi.org/10.1117/12.265364
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum wells

Polarization

Waveguides

Optoelectronic devices

Ions

Annealing

Fabrication

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