Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices

S. V. Baranetz; S. P. Dikiy; Leonid L. Fedorenko; E. B. Kaganovich; Sergey V. Svechnikov; V. A. Antonov

doi:10.1117/12.266824

6 February 1997 Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices

S. V. Baranetz, S. P. Dikiy, Leonid L. Fedorenko, E. B. Kaganovich, Sergey V. Svechnikov, V. A. Antonov

Author Affiliations +

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266824
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

Nonalloyed W-Zn compound based ohmic contact to p-type GaAs were obtained by vacuum pulse YAG-laser deposition of W/Zn/W/GaAs structure and by laser stimulated impurity Zn diffusion for forming of the submicron contact structure. Pulse laser modification processes were controlled by the pyrodetector system. High level of impurity concentration N_Zn allowed to form the p⁺-p GaAs layers. The W layers provided the drastic boundaries of contact layers and its thermal stability. The typical R_c value of 2.10^-5 (Omega) .cm² obtained for the W/Zn/W/GaAs remained stable after 400 degrees Celsius annealing and after 150 ma current testing during 100 hours.

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S. V. Baranetz, S. P. Dikiy, Leonid L. Fedorenko, E. B. Kaganovich, Sergey V. Svechnikov, and V. A. Antonov "Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266824

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