(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE

Hideo Kawanishi; Makiko Haruyama; Toshi Shirai; Yasuharu Suematsu

doi:10.1117/12.275585

6 June 1997 (BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE

Hideo Kawanishi, Makiko Haruyama, Toshi Shirai, Yasuharu Suematsu

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275585
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

GaN and their alloy systems have a potential for the application of optical devices operating in blue and ultraviolet spectral region. In this paper, the possibility of (BAlGa)N quaternary system lattice matched to (0001) 6H- SiC substrate is described for ultraviolet emitters in the view of bandgap energy, lattice-matching to substrates. The estimated bandgap energy of quaternary system is ranging from 3.9 eV to 6.1 eV. It is also discussed that the crystal growth of (BAlGa)N systems using metalorganic vapor phase epitaxy. The quaternary system lattice-matched to (0001) 6H- SiC have an advantage for the laser application operating in ultraviolet spectral region.

Citation Download Citation

Hideo Kawanishi, Makiko Haruyama, Toshi Shirai, and Yasuharu Suematsu "(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275585

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