Paper
6 June 1997 Calculation of Auger recombination in long-wavelength lasers
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Abstract
The understanding and evaluation of the Auger coefficient, C, and its variation with band structure is essential for accurate device modeling of long wavelength quantum well devices. We have developed a calculation of the Auger coefficient C for both 'band-to-band' processes, which involve strict k-selection rules, and 'k-relaxed' processes, where the strict k-selection rule is relaxed by momentum from phonons. To identify which process is dominating in 1.5 micrometers QW devices we have compared hydrostatic pressure measurements of the lasing threshold current with theoretical predictions for each process. We find that the 'k-relaxing' models are in good agreement with experiment as a function of pressure while the 'band-to-band' processes overestimate the reduction of the non-radiative component of the threshold current with pressure. Based on these results, we predict the threshold current for a number of well characterized 1.5 micrometers QW devices in the literature with a variety of strains and well widths.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Silver, Eoin P. O'Reilly, and Alfred R. Adams "Calculation of Auger recombination in long-wavelength lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275625
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KEYWORDS
Quantum wells

Laser damage threshold

Phonons

Instrument modeling

Heterojunctions

Semiconductor lasers

Binary data

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