Comparison of models for calculation of optical gain in gallium nitride

Vladimir A. Smagley; Petr Georgievich Eliseev; Marek Osinski

doi:10.1117/12.275555

6 June 1997 Comparison of models for calculation of optical gain in gallium nitride

Vladimir A. Smagley, Petr Georgievich Eliseev, Marek Osinski

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275555
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We discuss theoretical predictions for the gain spectra in GaN-based lasers from the point of view of adequate modeling, aimed at optimization of the laser structure and cavity parameters. The Coulomb enhancement effect is included, and it is shown that it leads to an increase of both the gain cross-section and the threshold current in edge-emitting lasers, due to shortening of carrier lifetime. The minimum threshold current density in such lasers with bulk active regions is estimated to be between 2 and 4 kA/cm² at room temperature.

Citation Download Citation

Vladimir A. Smagley, Petr Georgievich Eliseev, and Marek Osinski "Comparison of models for calculation of optical gain in gallium nitride", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275555

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