Paper
6 June 1997 Incorporating many-body effects into modeling of semiconductor lasers and amplifiers
Cun-Zheng Ning, Robert A. Indik, Jerome V. Moloney, Weng W. Chow, Andreas Girndt, Stephan W. Koch, Rolf H. Binder
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Abstract
Major many-body effects that are important for semiconductor laser modeling are summarized. We adopt a bottom-up approach to incorporate these many-body effects into a model for semiconductor lasers and amplifiers. The optical susceptibility function computed from the semiconductor Bloch equations (SBEs) is approximated by a single Lorentzian, or a superposition of a few Lorentzians in the frequency domain. Our approach leads to a set of effective Bloch equations. We compare this approach with the full microscopic SBEs for the case of pulse propagation. Good agreement between the two is obtained for pulse widths longer than tens of picoseconds.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cun-Zheng Ning, Robert A. Indik, Jerome V. Moloney, Weng W. Chow, Andreas Girndt, Stephan W. Koch, and Rolf H. Binder "Incorporating many-body effects into modeling of semiconductor lasers and amplifiers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275616
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Cited by 13 scholarly publications.
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KEYWORDS
Semiconductor lasers

Antimony

Semiconductors

Refractive index

Oscillators

Picosecond phenomena

Plasma

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