Modeling of the linewidth enhancement factor in multiple quantum well InGaAsP-based lasers

Mark S. Hybertsen

doi:10.1117/12.275624

6 June 1997 Modeling of the linewidth enhancement factor in multiple quantum well InGaAsP-based lasers

Mark S. Hybertsen

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275624
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A microscopic model of the gain and refractive index change in multi-quantum well lasers is applied to study the linewidth enhancement factor. The following issues in the model are studied: the lineshape used to broaden the gain, band gap renormalization, self consistent band bending and carrier spill out into the separate confinement layers. The application of the model to laser design issues is illustrated through consideration of the influence of well strain and barrier band gap. Comparison is made to experiment.

Citation Download Citation

Mark S. Hybertsen "Modeling of the linewidth enhancement factor in multiple quantum well InGaAsP-based lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275624

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