Paper
6 June 1997 Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells
Takeshi Uenoyama, Masakatsu Suzuki
Author Affiliations +
Abstract
Optical gains of wurtzite GaN/AlGaN quantum wells have been studied by a first-principles calculation and the k.p method. Most of the parameters in the k.p method were determined by fitting the band structures to the first- principles calculation. Owing to the small spin-orbit splitting energies and the strong electronegativity, the large hole density of states causes the higher threshold current density of the wurtzite GaN/AlGaN quantum well lasers. Then, we have proposed a new mechanism of the optical gain for laser diodes, using a localized level and the excitonic effects. The excitonic effects enhance an oscillator strength of the optical transition. When a localized level is exist in the band-gap, the optical gain between the localized state and one of the band edge states is produced with the very small carrier density. This optical gain is enhanced by the excitonic effect a the band edges and it might show a possibility of very low threshold current density for wide-gap laser diodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Uenoyama and Masakatsu Suzuki "Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275617
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum wells

Semiconductor lasers

Gallium nitride

Excitons

Laser damage threshold

Channel projecting optics

Crystals

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