ZnMgSSe-based laser diodes

H. Noguchi; S. Tomiya; Shun-Lien Chuang; Akira Ishibashi

doi:10.1117/12.275553

6 June 1997 ZnMgSSe-based laser diodes

H. Noguchi, S. Tomiya, Shun-Lien Chuang, Akira Ishibashi

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275553
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We summarize here recent progress in II-VI blue-green semiconductor laser diodes (LDs). ZnMgSSe quaternary alloy, a promising material for the cladding layer, has enabled us to realize a long lifetime exceeding 100h with improvements in the active layer, the electrode, and growth techniques. Studies of degradation have revealed that II-VI LDs degrade not catastrophically, but gradually with enhancement by electron-hole recombination at defect sites.

Citation Download Citation

H. Noguchi, S. Tomiya, Shun-Lien Chuang, and Akira Ishibashi "ZnMgSSe-based laser diodes", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275553

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