Modeling of Er-doped ion-exchanged glass waveguide amplifiers

Seppo Honkanen; Juha-Pekka Laine; Tomoko Ohtsuki; Ari Tervonen; Nasser Peyghambarian

doi:10.1117/12.271149

2 May 1997 Modeling of Er-doped ion-exchanged glass waveguide amplifiers

Seppo Honkanen, Juha-Pekka Laine, Tomoko Ohtsuki, Ari Tervonen, Nasser Peyghambarian

Author Affiliations +

Proceedings Volume 2996, Rare-Earth-Doped Devices; (1997) https://doi.org/10.1117/12.271149
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Modeling results for Er³⁺-doped waveguide amplifiers fabricated by various ion-exchange processes are presented. The gain performance of these devices for 977 nm and 1.48 micrometers pump wavelengths are compared. Measured spectroscopic properties of a phosphate glass with Er³⁺ concentration of 3.7 X 10²⁰ cm^-3 are used throughout the modeling, and waveguide propagation loss of 0.1 dB/cm is used. It is shown that gain coefficients exceeding 5 dB/cm are feasible utilizing optimized ion- exchanged waveguides in this glass. The modeling is performed for glasses doped with erbium only, excluding possible ytterbium codoping.

Citation Download Citation

Seppo Honkanen, Juha-Pekka Laine, Tomoko Ohtsuki, Ari Tervonen, and Nasser Peyghambarian "Modeling of Er-doped ion-exchanged glass waveguide amplifiers", Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997); https://doi.org/10.1117/12.271149

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