Paper
23 January 1997 Investigation of defects in highly photosensitive germanosilicate thin films
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Abstract
Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen- deficient germanium point defects in the glass structure. Based on this correlation, highly photosensitive thin films have been engineered which demonstrate the largest reported ultraviolet-induced refractive index perturbations ((Delta) n) in an as-synthesized material. Our thin-film fabrication process avoids the use of hydrogen sensitizing treatments and, thus, yields stable films which retain their predisposition for large photosensitivity for over one year of storage. Understanding the nature of the defects in such films and their relationship to charge trapping and enhanced photosensitivity is of paramount importance in designing and optimizing the materials. Toward this end, our films have been studied using electron paramagnetic resonance (EPR), capacitance-voltage, and optical bleaching and absorption spectroscopies. We find experimental evidence suggesting a model in which a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds form either diamagnetic positively or negatively charged Ge sites which are largely responsible for the charge trapping and photosensitivity in these thin films. We present experimental data and theoretical modeling to support our defect model and to show the relevance of the work.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kelly Simmons-Potter, Barrett G. Potter Jr., and W. L. Warren "Investigation of defects in highly photosensitive germanosilicate thin films", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); https://doi.org/10.1117/12.264170
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Cited by 6 scholarly publications.
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KEYWORDS
Germanium

Thin films

Ultraviolet radiation

Absorption

Glasses

Absorbance

Oxygen

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