All-optical devices realized by the post-growth processing of multiquantum-well structures

Patrick LiKamWa; Ayman M. Kan'an; Mitra Dutta; Jagadeesh Pamulapati

doi:10.1117/12.264227

22 January 1997 All-optical devices realized by the post-growth processing of multiquantum-well structures

Patrick LiKamWa, Ayman M. Kan'an, Mitra Dutta, Jagadeesh Pamulapati

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264227
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

An inexpensive and reliable process for the area-selective disordering of MQW structures is reported. The method relies on the diffusion, by rapid thermal annealing, of surface vacancies into the quantum wells thereby intermixing the Ga and Al atoms between the wells and barriers. A silicon oxide cap that is formed by curing a spun-on solution of glass forming compound acts as porous layer that enhances the formation of surface vacancies by allowing out-diffusion of Ga and Al atoms. This technique has been applied to the fabrication of two integrated optical devices. One is the nonlinear zero-gap directional coupler with disordered input and output branching waveguides, and the other is the symmetric nonlinear integrated Mach-Zehnder interferometer with one arm containing a non-intermixed MQW section. In both devices, the mechanism for the switching is the nonlinear refractive index that is caused by photo-generated carriers. Since this mechanism entails absorption of some of the pump beam, it is hence very important that the optical absorption be confined to the active sections only. Selective area disordering is shown to be very effective at defining regions of different bandgap energies. Hence it can be ensured that the energy of the pump laser beam is too low in comparison to the bandgap energy of the passive regions to be absorbed and the free carriers are only created in the non-intermixed active sections. The devices investigated using a pump-probe setup, exhibited strong all-optical switching behavior with a contrast ratio of better than 7:1. The controlled selective area intermixing of MQW structures will potentially play a significant role in the advancement of photonic integrated circuits.

Citation Download Citation

Patrick LiKamWa, Ayman M. Kan'an, Mitra Dutta, and Jagadeesh Pamulapati "All-optical devices realized by the post-growth processing of multiquantum-well structures", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264227

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Waveguides

Quantum wells

Aluminum

Annealing

Switching

Diffusion

Chemical species

Show All Keywords

Keywords/Phrases

Search In:

Publication Years