Controlled growth of long-wavelength SiGe/Si multiple quantum well resonant-cavity photodetectors

Roger Timothy Carline; D. A. O. Hope; Mark Brian Stanaway; David J. Robbins

doi:10.1117/12.273839

25 April 1997 Controlled growth of long-wavelength SiGe/Si multiple quantum well resonant-cavity photodetectors

Roger Timothy Carline, D. A. O. Hope, Mark Brian Stanaway, David J. Robbins

Proceedings Volume 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices; (1997) https://doi.org/10.1117/12.273839
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Recently, resonantly enhanced photoresponse in the > 7 micrometers range has been demonstrated for long wavelength SiGe/Si multi-quantum well infrared photodetectors using reflection from a thick buried SiO₂ layer. The SiGe/Si detector structures were grown epitaxially on bond-and-etch- back silicon-on-insulator substrates, with the separation of the reflecting oxide and detector surface determining the wavelength of resonant detection. Difficulties were, however, encountered in producing the desired cavity width. In this paper we show the origin to be a thickness-dependent error in the pyrometer measurement of wafer temperature caused by interference in the cavity of radiation to which the pyrometer is sensitive. Judicious choice of substrate oxide thickness is shown to reduce the effect. In-situ real- time monitoring of epitaxial growth rate and thickness using spectroscopic ellipsometry (SE) is demonstrated to be a more flexible solution. Thickness dependent oscillations in the SE spectra allow accurate position of the MQW and end- pointing of the cavity width to give optimum resonant enhancement effect. Use of surface sensitive regions of the SE spectra also allow monitoring of the repeatability of the individual MQW periods. Detectors grown using SE exhibit superior peak responsivities within 0.1 micrometers of the design wavelength.

Citation Download Citation

Roger Timothy Carline, D. A. O. Hope, Mark Brian Stanaway, and David J. Robbins "Controlled growth of long-wavelength SiGe/Si multiple quantum well resonant-cavity photodetectors", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273839

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available