Evaluation of an on-site developer blending system on the variability of developer concentration

Debra M. Carrieri; Travis A. Lemke; Paul J. Adams; Ashok V. Rao; Wayne L. Funk; Eric V. Estep; Jason B. Johnson

doi:10.1117/12.275858

7 July 1997 Evaluation of an on-site developer blending system on the variability of developer concentration

Debra M. Carrieri, Travis A. Lemke, Paul J. Adams, Ashok V. Rao, Wayne L. Funk, Eric V. Estep, Jason B. Johnson

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275858
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Reduction in critical dimension (CD) variation is essential for the production of today's integrated circuits. Reduction in the variability of process parameters such as resist thickness, bake temperatures, exposure dose, and developer concentration has a positive effect on the measured CD variability. Developer concentrations can be controlled by chemical suppliers within plus or minus 0.0005 N in a developer solution with a normality of 0.2620 N. A developer blending system has been successfully used for on-site blending of tetramethyl ammonium hydroxide (TMAH) with a variation in concentration of less than plus or minus 0.2% relative error at 3(sigma) . This study evaluates the variability of the final concentration and surface tension of a TMAH developer that was blended using a ChemLitho^TM Model 3000 Developer Blending System designed by FSI International and tested at Cypress Semiconductor Inc., Bloomington, Minn. In addition, the variability of energy required to clear resist (E₀) and of critical dimensions was examined on experimental wafers that were developed using product from this developer blending system. The desired final concentration of the TMAH was 0.2620 N with a surface tension of 42.5 dyne/cm. The measured variability of the TMAH concentration was less than plus or minus 0.2% relative error at 3(sigma) . The measured variability of the surface tension was less than plus or minus 1.5 dyne/cm. This on-site blending capability has eliminated the effects of shipping and handling on the product purity and concentration, provided real-time monitoring of the developer concentration, and provided positive photoresist developer within specification at a significant cost savings.

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Debra M. Carrieri, Travis A. Lemke, Paul J. Adams, Ashok V. Rao, Wayne L. Funk, Eric V. Estep, and Jason B. Johnson "Evaluation of an on-site developer blending system on the variability of developer concentration", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275858

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KEYWORDS

Semiconducting wafers

Particles

Critical dimension metrology

Photoresist developing

Process control

Lithography

Semiconductors

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