Paper
7 July 1997 Yield management and reticle defects
Kent B. Ibsen, Mark D. Eickhoff, Z. Mark Ma, Sonya Yvette Shaw, Steven D. Carlson, H. Tomomatsu
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Abstract
There are an increasing number of issues confronting lithography engineers in modern wafer fabs. Of these problems, yield loss due to reticle defects has received less attention as compared to the shrinking process window of advanced lithographic requirements. Wafer fabs also have concentrated primarily on equipment and people as major sources of yield loss. The requirement of increased focus on reticle defects is examined. The constraints of the current manufacturing capability of mask shops is driving the need for a better method to link the actual lithographic manufacturing process to the reticle defect analysis. This paper will propose a method for integrating the reticle inspection and wafer process as a method for advanced reticle disposition and specification generation. By linking the fab wafer process to the reticle defect inspection a more complete picture of the impact of having reticle defects can be assessed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent B. Ibsen, Mark D. Eickhoff, Z. Mark Ma, Sonya Yvette Shaw, Steven D. Carlson, and H. Tomomatsu "Yield management and reticle defects", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.275972
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KEYWORDS
Reticles

Semiconducting wafers

Lithography

Manufacturing

Defect inspection

Image processing

Inspection

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