Correlation between crystal defects and properties of CdTe:Ge radiation detectors

P. Feichuk; L. Shcherbak; D. Pluta; Pavel Moravec; Jan Franc; Eduard Belas; Pavel Hoschl

doi:10.1117/12.280410

26 August 1997 Correlation between crystal defects and properties of CdTe:Ge radiation detectors

P. Feichuk, L. Shcherbak, D. Pluta, Pavel Moravec, Jan Franc, Eduard Belas, Pavel Hoschl

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280410
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

High resistivity Ge-doped crystals with exact defined by radiometric analysis Ge contain were characterized by IR microscopy, dislocation etch techniques, scanning electron microscopy followed by detector performance features examination. the influence of several defect structure types on detector parameters were shown.

Citation Download Citation

P. Feichuk, L. Shcherbak, D. Pluta, Pavel Moravec, Jan Franc, Eduard Belas, and Pavel Hoschl "Correlation between crystal defects and properties of CdTe:Ge radiation detectors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280410

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