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Diffusion lengths of minority electrons and holes in Hg1-xCdxTe single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current images were used to determine the position of the p-n junction. The obtained EBIC data were then sued for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270 K.
Jan Franc,Eduard Belas,Roman Grill,A. L. Toth,Helmut Sitter,Pavel Moravec, andPavel Hoeschl
"Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280429
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Jan Franc, Eduard Belas, Roman Grill, A. L. Toth, Helmut Sitter, Pavel Moravec, Pavel Hoeschl, "Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method," Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280429