Picosecond Photoconductive Devices

A. P. DeFonzo; T. F. Carruthers

doi:10.1117/12.933225

23 April 1982 Picosecond Photoconductive Devices

A. P. DeFonzo, T. F. Carruthers

Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933225
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Two devices based on picosecond photoconductivity are reported. One is a germanium on sapphire device with a response time (FWHM) faster than 50 ps and a sensitivity in excess of 0.1 ma/mW, and is suitable for use when ultra-high speed gating of electrical signal is required. The other is an optically triggered GaAs transferred-electron device that generates oscillation bursts of controllable duration and frequency over the ranges of 1.5 to 4.0 nsec and 6.7 to 10.5 GHz, respectively.

Citation Download Citation

A. P. DeFonzo and T. F. Carruthers "Picosecond Photoconductive Devices", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); https://doi.org/10.1117/12.933225

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