Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

Andreas P. Glinz; Charles B. Morrison; Zheng Zhu

doi:10.1117/12.316651

7 July 1998 Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

Andreas P. Glinz, Charles B. Morrison, Zheng Zhu

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316651
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.

Citation Download Citation

Andreas P. Glinz, Charles B. Morrison, and Zheng Zhu "Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316651

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