Paper
8 April 1998 Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
Zane A. Shellenbarger, Michael G. Mauk, Jeffrey A. Cox, Joseph South, Joseph D. Lesko, Paul E. Sims, Murzy D. Jhabvala, Marilyn K. Fortin
Author Affiliations +
Abstract
Progress on mid-IR photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb and InAs substrates is reported. GaInAsSb p/n and p-i-n detectors and InAsSbP p/n detector structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. IR p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometers and 2.9 micrometers respectively. Room temperature background noise- limited detectivity of 4 X 1010 cmHz1/2/W GaInAsSb detectors and 4 X 108 cmHz1/2/W for InAsSbP was measured.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zane A. Shellenbarger, Michael G. Mauk, Jeffrey A. Cox, Joseph South, Joseph D. Lesko, Paul E. Sims, Murzy D. Jhabvala, and Marilyn K. Fortin "Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304474
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Cited by 17 scholarly publications.
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KEYWORDS
Sensors

Gallium indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide

Mid-IR

Gallium antimonide

Photodetectors

Indium arsenide

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