CAD of 0.1- to 10-GHz GaAs MMIC SPST switch

Ramchandra Yadav; V. S. R. Kirty

doi:10.1117/12.305617

16 April 1998 CAD of 0.1- to 10-GHz GaAs MMIC SPST switch

Ramchandra Yadav, V. S. R. Kirty

Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305617
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India

Abstract

The design of the SPST switch provides an insertion loss less than 2 dB, isolation more than 40 dB and return loss better than 17.5 dB in the frequency range of 0.1 GHz to 10 GHz. The insertion loss is improved by treating SPST switch as a 50 (Omega) artificial transmission line with incorporation of inductor in series arm and the capacitance of MESFET in the shunt arm. High isolation is ensured by the lower value of `ON' resistance of MESFET in shunt arm. Also good return loss is achieved by paralleling a 50 (Omega) resistor with capacitance of MESFET in series arm. The absence of DC blocking capacitors and replacement of large value bias chokes with 5 K(Omega) resistors effectively improved the performance of SPST switch at low frequency and also reduced the chip size. The overall chip dimension is 2.2 mm X 1.7 mm.

Citation Download Citation

Ramchandra Yadav and V. S. R. Kirty "CAD of 0.1- to 10-GHz GaAs MMIC SPST switch", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305617

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