Glass to silicon anodic bonding

Shamin Ahmad; R. Gopal; M. Mitra; Virendra Kr Dwivedi; Mahesh Kumar

doi:10.1117/12.305552

16 April 1998 Glass to silicon anodic bonding

Shamin Ahmad, R. Gopal, M. Mitra, Virendra Kr Dwivedi, Mahesh Kumar

Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305552
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India

Abstract

Glass-to-silicon anodic bonding is a well known process for fabricating number of microelectromechanical components and subassemblies. Experiments have been carried out by varying bonding parameters, i.e. temperature and bias voltage, to get strong bond between silicon and 7740 pyrex glass pieces. Bias voltage in the range of 400 - 450 V at 420 degree(s)C appears to be appropriate for quality bonds between silicon and glass.

Citation Download Citation

Shamin Ahmad, R. Gopal, M. Mitra, Virendra Kr Dwivedi, and Mahesh Kumar "Glass to silicon anodic bonding", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305552

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