X-Ray Lithography: Technology For The 1980s

C. R. Fencil; G. P. Hughes

doi:10.1117/12.933419

30 June 1982 X-Ray Lithography: Technology For The 1980s

C. R. Fencil, G. P. Hughes

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933419
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

Advances in X-ray lithography technology are occurring at a promising rate. Impressive progress has been made in the development of high-intensity sources, mask membrane and patterning technology, precision mask-to-wafer alignment, and faster, high-resolution X-ray resists. The concept of using this inherently low defect lithographic technique for manufacturing submicron integrated circuits by 1985 and beyond, is realistic. Current X-ray Lithographic research systems replicate integrated circuit patterns on a full wafer with a single exposure, but step-and-repeat exposure systems are being developed for more advanced submicron applications. Both system types are discussed, and performance trade analyses are presented to show the relative merits of each approach.

Citation Download Citation

C. R. Fencil and G. P. Hughes "X-Ray Lithography: Technology For The 1980s", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933419

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