Some issues in SEM-based metrology

David C. Joy

doi:10.1117/12.308720

8 June 1998 Some issues in SEM-based metrology

David C. Joy

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308720
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The scanning electron microscope (SEM) has many advantages for tasks for as metrology and defect review compared to other competitive technologies, but the level of performance required to meet the specifications proposed for the next generation of devices will raise some significant problems that must be overcome. These include theoretical limits on the spatial resolution, practical limits to performance set by the electron-optical characteristics of the SEM, and the dynamic response of the instrument to signal information. Unwanted artifacts of the electron-solid interaction such as charging and radiation damage must also be considered as potential restrictions to performance.

Citation Download Citation

David C. Joy "Some issues in SEM-based metrology", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308720

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE