Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density

Andrew E. Bair; Audrey M. Davis; Bradley D. Lantz; Jeffrey R. Johnson; Charles R. Spinner III; Steve Tanner; Von Jerick T. Marcos; Hiroshi Matsui

doi:10.1117/12.312463

29 June 1998 Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density

Andrew E. Bair, Audrey M. Davis, Bradley D. Lantz, Jeffrey R. Johnson, Charles R. Spinner III, Steve Tanner, Von Jerick T. Marcos, Hiroshi Matsui

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312463
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Preventing the formation of defects at the interface between an organic bottom-side anti-reflective coating and a photoresist is problematic with the use of these films. These defects have been attributed to different sources, such as mismatch of surface free energies, trapped water, etc., and have been shown to be highly dependent on the rotational speed of the wafer during the photoresist dispense step. Extensive work has also been done by most semiconductor manufacturers to reduce photoresist dispense volumes during wafer processing. Due to significant increases in photoresist cost for 248 nm lithography, this issue has become increasingly important. This paper shows that defect prevention and resist volume reduction can be accomplished with a fast, high pressure dispense of the photoresist.

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Andrew E. Bair, Audrey M. Davis, Bradley D. Lantz, Jeffrey R. Johnson, Charles R. Spinner III, Steve Tanner, Von Jerick T. Marcos, and Hiroshi Matsui "Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312463

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