NA optimization of 360-nm and 300-nm pitch devices

Hyoungjoon Kim; Sunggi Kim; Chang-Hwan Kim; Jin Hong; Junghyun Lee; Hoyoung Kang; Joo-Tae Moon

doi:10.1117/12.310798

29 June 1998 NA optimization of 360-nm and 300-nm pitch devices

Hyoungjoon Kim, Sunggi Kim, Chang-Hwan Kim, Jin Hong, Junghyun Lee, Hoyoung Kang, Joo-Tae Moon

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310798
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

KrF extendibility to 180 nm and 150 nm L/S patterns and optimized NA were investigated by simulation. Mask CD error and exposure dose error are very important factor in photo process of device manufacture. We took 2 level of expected mask quality and dose control. The mask CD error of plus or minus 15 nm and dose error of plus or minus 4% are very tight but possible level in near future, and plus or minus 10 nm and 3% as extremely tight level but expected to be achieved in sometime. 0.6 NA and quadrupole illumination (pole offset 0.75, diameter 0.1) shows 0.8 micrometer depth of focus (DOF) with mask CD error of plus or minus 15 nm and dose error of plus or minus 4% for 180 nm patterns and bigger in our simulation. This shows that the 0.6 NA KrF exposure tool could be applied to 180 nm devices with acceptable mask and dose errors, but there are still problems of illumination uniformity and throughput caused by extreme off axis condition. Including 150 nm pattern, only 0.7 NA shows 0.6 micrometer DOF with mask CD error of plus or minus 10 nm and dose error of plus or minus 3% which is extremely tight condition.

Citation Download Citation

Hyoungjoon Kim, Sunggi Kim, Chang-Hwan Kim, Jin Hong, Junghyun Lee, Hoyoung Kang, and Joo-Tae Moon "NA optimization of 360-nm and 300-nm pitch devices", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310798

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