Paper
31 July 1998 W-band HEMT-based power-amplifier module for millimeter-wave LO multipliers
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Abstract
We report on the performance of power amplifiers as local oscillator drivers for millimeter and submillimeter-wave receivers. A MMIC power amplifier based on 0.1 micron GaAs HEMT technology on 50 micron thick substrate has been packaged in a waveguide block and characterized. Output power in excess of 100 mW is demonstrated over 88 - 94 GHz with more power easily achievable. The noise properties of the MMIC amplifier in multiplied local oscillator chains are characterized in a low noise superconductor-insulator-superconductor mixer based heterodyne receiver. A 386 GHz SIS mixer was used to characterize noise temperature in a laboratory environment. A more sensitive measurement of noise contribution from the amplifier was performed on a 278 GHz mixer/receiver at the Caltech Submillimeter-Wave Observatory, during astronomical observations. It is concluded that the MMIC amplifier does not add additional significant noise to the radiometer system.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Todd C. Gaier, Imran Mehdi, Jacob W. Kooi, B. H. Fujiwara, and Richard Lai "W-band HEMT-based power-amplifier module for millimeter-wave LO multipliers", Proc. SPIE 3357, Advanced Technology MMW, Radio, and Terahertz Telescopes, (31 July 1998); https://doi.org/10.1117/12.317344
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Cited by 5 scholarly publications.
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KEYWORDS
Amplifiers

Receivers

Oscillators

Diodes

Field effect transistors

Temperature metrology

Interference (communication)

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