Paper
22 June 1998 650-nm GaInP/AlGaInP visible laser diode with buried tapered-ridge structure
Jun-Ho Jang, Young-Hak Chang, Hee-Suk Song, Dong-Hwan Kim, Jong-Seok Kim, Tae-Kyung Yoo
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190H (1998) https://doi.org/10.1117/12.310999
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
A new tapered ridge waveguide structure is employed in GaInP/AlGaInP laser diodes in order to increase (theta) PLL for digital versatile disk optical pick-up application. The dry-etched buried tapered ridge has been fabricated using BCl(subscript 3/Ar plasma in electron cyclotron resonance reactive ion etching system and chemical treatments. The parallel far-field angle was increased up to 9.7 degrees when the width of tapered ridge at the front facet was reduced down to 3.2 micrometers . The threshold current was 60mA and slope efficiency was 0.42W/A, which were comparable to the values of wet-etched lasers. The characteristics temperatures were estimated to be 154K at 25-60 degrees C and 60K at 60-100 degrees C. An operating time of over 1000 hours at the output power of 5mW at 70 degrees C was obtained without significant increase of operating current, which indicates a sufficient reliability for commercial purposes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-Ho Jang, Young-Hak Chang, Hee-Suk Song, Dong-Hwan Kim, Jong-Seok Kim, and Tae-Kyung Yoo "650-nm GaInP/AlGaInP visible laser diode with buried tapered-ridge structure", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190H (22 June 1998); https://doi.org/10.1117/12.310999
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KEYWORDS
Semiconductor lasers

Argon

Digital video discs

Laser damage threshold

Plasma

Reactive ion etching

Reliability

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