Paper
1 September 1998 Mask prototyping for ultradeep x-ray lithography: preliminary studies for mask blanks and high-aspect-ratio absorber patterns
Author Affiliations +
Proceedings Volume 3512, Materials and Device Characterization in Micromachining; (1998) https://doi.org/10.1117/12.324070
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
The use of hard X-ray energies for ultra-deep X-ray lithography requires a thorough re-investigation of all issues associated with the LIGA technology materials issues and processes, in particular for the manufacture of high-energy-X- ray masks. Calculations were performed to compare various mask blanks in particular thick KaptonR and thinned silicon blanks. Absorber pattern formation schemes have been investigated using UV contact printing or X-ray lithography with SU8 photoresist. SU8 photoresist also offers an improved X-ray sensitivity over PMMA resist. Resist patterns over 500 micron deep with aspect ratio over 10 and vertical sidewalls were achieved in SU-8, allowing the use of medium energy range X-rays to obtain high quality patterns of much greater resist thickness.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chantal G. Khan Malek "Mask prototyping for ultradeep x-ray lithography: preliminary studies for mask blanks and high-aspect-ratio absorber patterns", Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); https://doi.org/10.1117/12.324070
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Cited by 8 scholarly publications.
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KEYWORDS
Photomasks

Silicon

X-ray lithography

X-rays

Semiconducting wafers

Polymethylmethacrylate

Printing

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