Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides

Jose M. M. M. de Almeida; Antonio M. P. P. Leite; Jaymin Amin

doi:10.1117/12.344505

1 April 1999 Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides

Jose M. M. M. de Almeida, Antonio M. P. P. Leite, Jaymin Amin

Proceedings Volume 3622, Rare-Earth-Doped Materials and Devices III; (1999) https://doi.org/10.1117/12.344505
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

An investigation on optical amplification in Ti waveguides in LiNbO₃ doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNbO₃ substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.

Citation Download Citation

Jose M. M. M. de Almeida, Antonio M. P. P. Leite, and Jaymin Amin "Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344505

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